FIELD: crystal growing. SUBSTANCE: silicon monocrystals are grown according to Chokhralski method using rotation of crucible at speed 0.2 to 2.0 rpm and counterrotation of crystal at speed 0.2 to 20 rpm, bending deflection of crystallization front in direction of inoculum being no greater than 0.2. Crystals are fit for use as semiconductors in electronics. EFFECT: decreased number of microdefects in crystals. 1 dwg, 4 ex
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