METHOD OF HARDENING DISLOCATION-FREE SILICON PLATES Russian patent published in 2009 - IPC C30B33/02 C30B29/06 H01L21/322 

FIELD: metallurgy, crystal growing.

SUBSTANCE: invention refers to process of production of dislocation free plates of semi-conducting silicon cut out of mono-crystals, grown by Czochralski method, and applied for producing integrated circuits and discrete electronic devices. Method of upgrading mechanical hardness of mono-crystalline dislocation-free silicon plates with oxygen contents at the level 6×10¹⁷-9×10¹⁷ cm^-3 is performed by two-stages thermal treatment in inert medium, for instance, in argon, initially at the temperature of 1000÷1020°C during 10-15 minutes, and further at the temperature of 600-650°C during 7.5-8.5 hours with following cooling in the air.

EFFECT: hardening of mono-crystalline dislocation-free silicon plates of bigger diameter.

2 cl, 1 ex, 1 tbl