METHOD OF GROWING SILICON MONOCRYSTALS Russian patent published in 1997 - IPC

FIELD: crystal growing. SUBSTANCE: invention is aiming at controlling concentration of oxygen in dislocation-free monocrystals. This aim is achieved when, in a method of growing silicon monocrystals using quartz crucible 270-330 mm in diameter installed in heater at ratio of area of melt/crucible contact surface to area of open melt surface ranged from 1.5 to 4.0, distance h from initial level of melt in crucible to upper edge of heater is maintained equal to 2-9 cm and increase (decrease) in oxygen concentration in upper part of growing monocrystal per each 0.4 cm^-3 is accomplished by raising (lowering) melt level of melt by 1 cm within h range. EFFECT: enabled growing silicon monocrystals for large variety of semiconductor devices with different specifications in respect to oxygen concentration. 1 dwg, 1 tbl