MULTILAYER HYBRID INTEGRATED S H F CIRCUIT Russian patent published in 1997 - IPC

Abstract RU 2071646 C1

FIELD: electronics. SUBSTANCE: recess where caseless semiconductor device is located is made in multilayer printed circuit board in each substrate of package on its reverse side. Such location of device improves electric and mass-and-size characteristics. EFFECT: improved electric and mass-and-size characteristics of SHF circuit. 2 cl, 2 dwg

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RU 2 071 646 C1

Authors

Iovdal'Skij V.A.

Jashin A.A.

Kandlin V.V.

Budanov V.N.

Dates

1997-01-10Published

1992-07-29Filed