MULTILAYER HYBRID MICROWAVE AND EHF INTEGRATED CIRCUIT Russian patent published in 2000 - IPC

FIELD: semiconductor microelectronics. SUBSTANCE: integrated circuit has stack of solid insulating boards joined together and bearing metallization pattern at least on one side of board and pendant chips of semiconductor chip devices mounted in board depressions wherein they are held in position by means of adhesive. Contact pads of chips are electrically connected to metallization pattern. Depressions for chips are made in boards mounting chips on at least one side of board. Their depth is sufficient to receive face sides of chips in one plane with board surface bearing the depression; distance between side walls of depression and chips is 1-180 mcm. Distance between face of devices and adjacent board of stack relative to chip-mounting board is 1-100 mcm. EFFECT: improved electrical characteristics, reduced mass and size, improved conditions of heat transfer from chips. 3 cl, 1 dwg