METHOD TO MAKE HYBRID INTEGRAL CIRCUIT OF SHF BAND Russian patent published in 2015 - IPC H01L27/00 H01L23/36 H01L21/77 H01L21/98 H05K3/10 H05K9/00 

FIELD: electricity.

SUBSTANCE: by the method for manufacturing of a high-power hybrid integral circuit of SHF band individual dielectric layers are made in the preset sequence at a multilayer dielectric substrate with at least one through opening; the preset metallised coating for the circuit is applied to each dielectric layer and screen earthing metallisation is applied to the reverse side of the lower layer at the multilayer dielectric substrate. The preset sequence for the multilayer dielectric substrate is formed by location of separate dielectric layers with simultaneous superimposition of their through openings thus creating at least one through opening in the multilayer dielectric substrate; then sintering and annealing are carried out; the multilayer dielectric substrate is placed and fixed by screen earthing metallization at electricity- and heat-conductive base; an active heat-generating component is placed and fixed in each through opening of the multilayer dielectric substrate ensuring location of their faces in the same plane; electric contact pads of the active heat-generating component are connected to the circuit layout of the metallised coating of the multilayer dielectric substrate.

EFFECT: improving electrical performance due to improvement of heat removal, increase in fabricability with maintenance of available weight and dimensions.

3 cl, 1 dwg, 1 tbl