LARGE-SCALE MICROWAVE HYBRID INTEGRATED CIRCUIT Russian patent published in 2000 - IPC

FIELD: semiconductor microelectronics. SUBSTANCE: integrated circuit has board with depression on its underside under base ridge; holes of definite size are provided in depression bottom; upper chip-free part of base ridge is electrically connected with depression bottom; some of contact pads of chip are grounded through holes in depression bottom; distance between chip and walls of holes mounting it and that between chip hole and grounding hole are less than 150 mcm. EFFECT: improved electric characteristics, reduced mass and size, facilitated manufacture. 4 cl, 6 dwg