METHOD OF LOCAL LIQUID EPITAXY Russian patent published in 1997 - IPC

FIELD: semiconductor technology, can be used in fabrication of semiconductors and integrated circuits. SUBSTANCE: the method consists in local application of material onto the surface of the single-crystal substrate, forming with substrate material a liquid phase at a temperature below the substrate melting point, and subsequent thermal treatment. In the process of thermal treatment the substrate is subjected to pulsed heating, the length of pulses of supplied power is shorter than the intervals between pulses. Orientation of the substrate is selected in such a way that its dissolution and crystallization would be hampered by interphase processes. In these conditions the dissolution processes mainly proceed in the direction perpendicular to the substrate surface, and the crystallization process- in the direction parallel to the substrate surface. In the stage of substrate preparation or in the process of thermal treatment at least one or several additional doping agents are introduced in the composition of liquid phase. In the process of thermal treatment the average process temperature, amplitude length of pulses of supplied power and interval between them are varied. Material forming the liquid phase with the substrate material may be applied onto the substrate plane surface, in the windows of the masking layer or in the recesses on its surface obtained by any standard method. The method provides for production of films on local substrate sections with a controlled distribution in composition and properties (doping film, width of forbidden gap, etc. ) along the film surface. EFFECT: production of controllable surface profile of epitaxial film compound. 2 cl