METHOD OF MANUFACTURE OF SILICON-ON-INSULATOR STRUCTURE Russian patent published in 1997 - IPC

FIELD: microelectronics. SUBSTANCE: mask is produced on surface of original substrate by nonlithographic methods. Mask pattern is essentially combination of holes of arbitrary form and submicron dimensions spaced at submicron distance from one another. Wells are formed in silicon plate through obtained mask by etching. Walls of wells are masked by silicon nitride. Then structure is oxidizer. Silicon oxide grows from well bottom and turns into solid layer separating the monocrystal silicon film with holes from silicon plate. Epitaxy is performed on side surface of holes in monocrystal silicon film till holes are overgrown with monocrystal silicon. Thus silicon-on-insulator structure is obtained. EFFECT: more effective manufacturing process. 6 dwg