HYBRID MICROWAVE-FREQUENCY INTEGRATED CIRCUIT Russian patent published in 2013 - IPC H01L27/00 H01L23/34 H05K7/20 

FIELD: electricity.

SUBSTANCE: in a hybrid microwave-frequency integrated circuit, at least one depression is made on the front face a dielectric substrate, the bottom of the depression having at least one through-hole filled with an electroconductive and heat-conducting material, wherein said depression is meant for accommodating at least one active heat-dissipating component, contact areas of which are connected to the topological pattern of a metallised coating on the front face of the substrate by wire connections, wherein the depth of the depression enables to place the front surfaces of the active heat-dissipating component and the dielectric substrate in the same plane. There is an additional heat-diffusing plate at the bottom of the depression, and the active heat-dissipating component lies on the front opposite face of the heat-diffusing plate; the through-hole is filled with an electroconductive and heat-conducting material and lies uniformly in the plan view; temperature drop Δt on the height from the active heat-dissipating component to the back side of a metal heat-removing base, thickness of the heat-diffusing plate h, the ratio of the area of the through-hole in the bottom of the depression to its entire area W, coefficient of heat conduction of the heat-diffusing plate λ, specific heat flux between the heat-diffusing plate and the back side of the metal heat-removing base q, area of the heat-diffusing plate S in the plan view are in a disclosed polynomial relationship.

EFFECT: improved electrical characteristics of hybrid microwave-frequency integrated circuits, including power circuits, owing to more efficient heat removal.

5 cl, 6 dwg, 1 tbl