POWER HYBRID MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2010 - IPC H01L25/16 

FIELD: physics.

SUBSTANCE: power hybrid microwave integrated circuit has transistors which are made in form of chips with flat beam leads. On the metallic heat-sinking base there is a projection whose layout coincides with the opening in the insulating substrate and enters the said opening. The height of the projection enables its top plane to lie aflush with the face of the insulating substrate. On the top plane of the projection there is a cavity running through from the side of the flat beam leads of the chip of one of the transistors connected to the topological metallisation pattern. On the top lane of the projection of the metallic heat-sinking base, at least on one side the chip of one of the transistors there is at least one mounting pad which has a metal plate which is has good electro- and heat conduction and is joined to it. In this metal plate there is at least one groove into which the chip of the other transistor is put. The groove runs through from the side of the flat beam leads of the chip which are connected to the topological metallisation pattern and is proportional to the pattern. Other flat beam leads of transistor chips are connected to the projection on the metallic heat-sinking base. The width of the transistor chip is equal to the width of the projection of the metallic heat-sinking base and the width of the good heat conducting plate. The thickness of the bottom of the groove and distance from the edge of the groove to the closest edge of the plate are selected such that there is minimal difference in maximum temperature of the chips.

EFFECT: improved heat removal from transistor chips, improved electrical and mass and size properties, as well as increased technological effectiveness of the power hybrid microwave integrated circuit.

3 cl, 2 dwg, 1 tbl, 1 ex