POWERFUL HYBRID INTEGRAL CIRCUIT OF SHF RANGE Russian patent published in 2013 - IPC H01L27/00 H01L25/00 H01L23/32 H05K1/18 

FIELD: electricity.

SUBSTANCE: powerful hybrid integral circuit of SHF range contains electric- and heat-conducting base with protrusion, dielectric substrate with metallisation pattern on its face and ground metallisation pattern at the other side divided at least into two parts and each part is installed at the heat-conducting base at the opposite sides from protrusion, back-to-back to protrusion; at least one chip of active semiconductor is installed and fixed at the protrusion; height of the protrusion is so that exposed surfaces of chips and dielectric substrate are placed in the same plane; the protrusion of electric- and heat-conducting base is made as metalised diamond insert placed and fixed at the base depression, at that selected depression depth h ensures minimum temperature difference Δt (°C) for the chip of active semiconductor and the other side of electric- and heat-conducting base: where λ is thermal conductivity of diamond (coefficient of heat conductivity W/(m×degree)), Q is power of the chip of active semiconductor (W), polynominal coefficients are A₁=-17.44331; A₂=31.36052; A₃=-22.21548; A₄=19.01102; A₅=-995.19516; A₆=-4.10308×10³; A₇=-1.56933×10³; A₈=4.81737×10⁶; A₉=-1.6359×10⁹ corresponding to depression depth h in the range from 0.001 up to 0.8 mm and thickness of depression bottom is equal to 0.2 mm or more.

EFFECT: improving thermal and electric characteristics.

2 cl, 5 dwg, 3 tbl