METHOD TO MAKE HYBRID INTEGRAL CIRCUIT OF SHF BAND Russian patent published in 2014 - IPC H01L25/16 

FIELD: electricity.

SUBSTANCE: method for manufacture of a powerful hybrid integral circuit of SHF band includes formation of a multilayer dielectric substrate by decomposing of individual dielectric layers with formation of at least one through-hole in the substrate, further sintering and annealing, fixing of the substrate with screen earthing metallisation to the electro- and heat-conductive base, fixing of the active heat-generating component in one through-hole in the substrate, connecting of electric bonding pads of the active heat-generating component with topologic lines of the substructure metalised coating and control of electric characteristics for the hybrid integral circuit. While manufacturing individual dielectric layers in the multilayer dielectric substrate the through-holes are made with a certain cross-section. While applying metalised coating of topological lines and screen earthing metallisation the circuit is filled with material of the metalised coating through the through-hole and additional through-holes. While forming a multilayer dielectric substrate the individual dielectric layers are placed in a certain pattern and formation of the active heat-generating component is made directly in one through-hole at the multilayer dielectric substrate.

EFFECT: reducing factory labour hours and improving electric characteristics.

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