MAGNETORESISTIVE MEMORY GATE Russian patent published in 1997 - IPC

FIELD: computer engineering, in particular, random-access memory units. SUBSTANCE: two thin-film layers of magnetoresistive material have different levels of magnetic anisotropy field. Ratio of levels is greater than four. This results in possibility to decrease control currents for same size of magnetoresistive memory gate. This results in decreased size of semiconductor control circuits which are located on same substrate. EFFECT: increased information density, facilitated manufacturing, decreased power usage. 3 dwg