GATE WITH MEMORY Russian patent published in 1997 - IPC

FIELD: automation and computer engineering, in particular, thin-film magnetic memory gates. SUBSTANCE: central conductor 9 which is located over strip is oriented with respect to this strip in order to achieve alignment of magnetic field of current which runs in conductor and axis of light magnetization of thin-film magnetic fields 5 and 6. Said thin-film magnetic fields 5 and 6 have different values of magnetic anisotropy fields. Ratio between greater and lesser fields is greater than four. EFFECT: increased functional capabilities. 3 cl, 4 dwg