THIN-FILM MAGNETIC INVERTER Russian patent published in 2001 - IPC

FIELD: automatics and computing technique, namely magnetic thin-film switchable memory units. SUBSTANCE: thin-film magnetic micron-size inverter is made with use of spin-valve magnetoresistive structure with really achieved value of spin-valve magnetoresistive effect, it is manufactured according to integrated planar process and may operate at severe conditions. Thin-film magnetic inverter includes first thin-film working member arranged on silicon substrate with first isolating layer; first working member has laminate magnetoresistive strip on base of spin-valve magnetoresistive structure, feedback conductor and information conductor. Magnetic inverter includes in addition arranged in the same isolating layer: working member similar to first one and two identical ballast members, each having laminate magnetoresistive strip similar to that of working members. Working and ballast members are connected to bridge circuit in such a way that one end of laminate magnetoresistive strip of each working member is connected with first end of its own feedback conductor; ends of laminate magnetoresistive strip of ballast member are connected respectively with other ends of laminate magnetorestive strips of working members; ends of laminate magnetoresistive strip of second ballast member are connected respectively with second ends of feedback conductors of working members. Information conductors of both working members are mutually connected in series. EFFECT: possibility for making micron-size thin-film magnetic inverter capable to operate in severe conditions. 4 dwg