PROCESS OF MANUFACTURE OF SILICON-ON-INSULATOR STRUCTURE Russian patent published in 1997 - IPC

FIELD: integrated circuits formed on base of silicon-on-insulator structure. SUBSTANCE: mask is formed on surface of silicon plate by nonlithographic methods. Pattern of mask is assemblage of holes of unspecified shape having size less than micron spaced one from another by distance not exceeding one micron. Wells are formed in silicon plate by etching through mask with such pattern. Walls of wells are masked by silicon nitride. The silicon of plate is oxidized. Silicon oxide grows from bottom of wells and links up in continuous layer separating monocrystalline silicon film with holes from silicon plate. Epitaxy of silicon on monocrystalline silicon film with holes is conducted and as result silicon- on-insulator structure is manufactured with smooth surface of silicon layer. EFFECT: enhanced productivity of process. 6 dwg