METHOD FOR PRODUCING SILICON-ON-INSULATOR STRUCTURES Russian patent published in 1996 - IPC

FIELD: manufacture of discrete devices and integrated circuits. SUBSTANCE: submicron-sized masking sections of arbitrary shape are formed on silicon substrate surface by other than lithographic method where they are spaced submicron distance apart; this mask is used for anisotropic etching of silicon plate through definite depth. Upon mask removal, epitaxy is made on surface formed by tops of silicon piles obtained by anisotropic etching with the result that epitaxial layer and silicon plate are joined through many piles. Then grown epitaxial layer of silicon is locally etched to provide access for oxidizer to layer of silicon piles. EFFECT: facilitated procedure. 5 cl, 7 dwg