METHOD OF EPITAXIAL GROWTH OF SILICON CARBIDE SINGLE CRYSTALS AND REACTOR FOR ITS EMBODIMENT Russian patent published in 2001 - IPC

FIELD: technology of manufacturing semiconductor devices operating at high temperatures. SUBSTANCE: method of epitaxial growth of bulk single crystals of silicon carbide by CVD on growth surface 10 in reactor of horizontal type includes supply to reactor chamber accommodating at least one base 10 of gaseous reagents containing silicon and carbon with chamber walls heated to temperature within 1800-2800 C and heated base 10. Reagents are supplied to chamber separately. Reagent containing silicon is supplied through channel 7 along chamber and reagent containing carbon is supplied from two sides through channels 14. Reagents are mixed directly in zone of growth surface of base 10. EFFECT: production of bulk single crystals SiC of high quality and large thickness with low production cost and high productivity. 11 cl, 2 dwg