METHOD OF GROWING SILICON CARBIDE MONOCRYSTALS Russian patent published in 2011 - IPC C03B23/00 C30B29/36 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of growing monocrystals through condensation of evaporated or sublimated material and can be used in the semiconductor industry. In a growth chamber having heat insulation, an evaporating surface of polycrystalline silicon carbide and the growth surface of the inoculating crystal are placed in parallel opposite each other. The growth chamber is heated. While heating the growth chamber, the inoculating crystal is simultaneously cooled through a pyrometric hole in the heat insulation of the growth chamber. A working temperature field is created in the growth zone with axial gradient directed from the inoculating crystal to the silicon carbide source. The crystal grows owing to evaporation of the polycrystalline silicon carbide and crystallisation of silicon carbide from the vapour phase on the growth surface of the inoculating crystal. Before cooling the monocrystal, a heat sealing plug is inserted into the pyrometric hole. Temperature of the monocrystal is gradually lowered at a rate of 30-100°C per hour by reducing power of the heater of the growth chamber.

EFFECT: invention is aimed at improving quality of silicon carbide monocrystals while simultaneously accelerating their growth.

2 cl, 3 dwg