FIELD: crystal growing and semiconductors. SUBSTANCE: seed crystal surface 3 in the primary partial region 4 is intended as crystallization surface for monocrystal 6 growing out of gas phase, and surface in the secondary partial region 5 is provided with coating 7, which is chemically resistant against seed crystal 2 and gas phase and does not melt at growing temperatures. EFFECT: avoided thermal degradation of seed crystal and increased quality of grown monocrystals (6). 17 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCTION OF SILICON-CARBIDE SINGE CRYSTALS | 1996 |
|
RU2157864C2 |
| PROCESS AND GEAR FOR PRODUCTION OF MONOCRYSTALS OF SILICON CARBIDE BY WAY OF SUBLIMATION GROWING | 1995 |
|
RU2155829C2 |
| METHOD FOR OBTAINING GEM STONES | 2023 |
|
RU2808301C1 |
| MONOCRYSTAL SiC AND METHOD OF ITS PRODUCTION | 1998 |
|
RU2160327C2 |
| METHOD FOR PRODUCING MONOCRYSTALLINE SiC | 2023 |
|
RU2811353C1 |
| PROCEDURE FOR MONOCRYSTAL SiC PRODUCTION | 2014 |
|
RU2562484C1 |
| METHOD FOR PRODUCING SINGLE-CRYSTAL SIC POLYTYPE 4H | 2021 |
|
RU2768938C1 |
| SUBLIMATION METHOD FOR GROWING SILICON CARBIDE MONOCRYSTALS AND SILICON CARBIDE SOURCE INVOLVED | 1996 |
|
RU2094547C1 |
| METHOD OF PRODUCING MONOCRYSTALLINE SIC | 2020 |
|
RU2736814C1 |
| METHOD OF EPITAXIAL GROWTH OF SILICON CARBIDE SINGLE CRYSTALS AND REACTOR FOR ITS EMBODIMENT | 1999 |
|
RU2162117C2 |
