CONFIGURING ACTIVE N-AREA OF SOLAR ELEMENTS Russian patent published in 2016 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: claimed process of configuring the active n-area of solar elements comprises the formation of phosphorus-silicate glass on the semiconductor plate surface from gas phase. Note here that dopant source is composed of liquid source of phosphorus oxychloride (POCl₃) at the following ratio of components: nitrogen N₂ = 280 l/h, oxygen O₂ = 300 l/h, oxygen O₂ = 15 l/h, nitrogen via feeder N₂ = 14 l/h. This invention allows the phosphorus diffusion at 1000°C to get R_S = 35±10 Ohm/cm.

EFFECT: reduced scatter of surface concentration over semiconductor plate, accelerated process, lower temperature.

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