METHOD OF PRODUCING GLASS FROM PHOSPHORUS PENTOXIDE Russian patent published in 2014 - IPC H01L21/316 

FIELD: chemistry.

SUBSTANCE: silicon wafers are loaded into a quartz tray which is placed in a pipe located inside a heated single-zone furnace SDOM-3/100. A stream of carrier gas - hydrogen (H₂) - is passed through the pipe. Phosphorus anhydride (P₂O₅) is placed in the source area and heated to temperature of 300°C at which the source evaporates. The process is carried out at the following gas flow rates: O₂=40 l/h, nitrogen N₂=500 l/h.

EFFECT: carrying out a phosphorus diffusion process using a solid diffusion source, reduced spread of values of surface concentration on the entire surface of the silicon wafer and short duration and low temperature of the process.