METHOD OF DIFFUSING PHOSPHOROUS FROM PHOSPHOROUS-SILICATE FILMS Russian patent published in 2009 - IPC H01L21/225 

FIELD: physics.

SUBSTANCE: method of diffusing phosphorous from phosphorous-silicate films involves formation of phosphosilicate glass on the surface of a silicon wafer from a gas phase. The diffusant source used is liquid source of phosphorous oxychloride (POCl₃) with the following ratio of components: oxygen - O₂=38 l/h nitrogen - N₂=700 l/h, nitrogen through feeder - N₂=36.7 l/h at operating temperature of 1000°C, time for predeposition of phosphorous - 40 minutes, surface resistance R_S=160±10 Ohm/cm.

EFFECT: reduced spread of surface concentration values on the entire surface of the silicon wafer, shorter duration and lower temperature of the process.

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