FIELD: optoelectronics. SUBSTANCE: charge-coupled device includes silicon substrate, undergate layer of insulator, polysilicon electrodes of phases with oxidized polysilicon wires and contact windows for them. Sections of oxidized polysilicon with dimensions bigger than dimensions of contact windows are arranged under contact windows between undergate layer of insulator and polysilicon wires. EFFECT: facilitated manufacture, increased output of good articles. 2 dwg
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