SEMICONDUCTOR LASER (VERSIONS) Russian patent published in 2014 - IPC H01S5/32 H01S5/34 

FIELD: physics, optics.

SUBSTANCE: disclosed group of inventions relates to semiconductor lasers. The semiconductor laser includes a heterostructure grown on a substrate having a buffer layer, a coating layer, a contact layer, an active region with an active quantum well or active quantum wells, made in a p-n and/or p-i-n junction, formed in the surrounding semiconductor layers, with the refraction index of the active quantum well or refraction indices of the active quantum wells greater than the refraction index of the surrounding semiconductor layers. A waveguide is formed by all layers of the heterostructure owing to difference in the refraction indices of the active quantum well or active quantum wells and the surrounding semiconductor layers, wherein the substrate is doped more than the region with the quantum well or the region with the quantum wells, the doping level of the substrate is 10¹⁸-3*10¹⁸ cm^-3, the buffer layer has the same doping level as the substrate, the coating layer is less doped than the substrate, the doping level of the coating layer is 10¹⁷-5*10¹⁷ cm^-3, the contact layer is heavily doped, the doping level of the contact layer is 10¹⁹-5*10¹⁹ cm^-3.

EFFECT: reduced transverse divergence of radiation, reduced internal optical losses, cheaper and easier manufacturing.

4 cl, 5 dwg