FIELD: physics.
SUBSTANCE: method includes carrier excitation in at least one quantum well in the active region enclosed in the heterostructure between the confining layers formed on the substrate as a p-i-n or p-n-junction and generation of radiation with an increased aperture of its output, wherein for expansion of the mentioned aperture in the direction normal to the plane of the heterostructure, and radiation parallel to the mentioned plane, the partial output of the generated fundamental mode to the substrate is provided by selecting a sufficiently thin confining layer on the substrate side and controlling excess of the effective refractive index of the generated fundamental mode above the refractive index of the substrate by an amount not exceeding 0.0011.
EFFECT: providing the possibility of improving the radiation divergence.
3 cl, 4 dwg
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Authors
Dates
2017-08-03—Published
2016-09-07—Filed