PROCESS OF MANUFACTURE OF SEMICONDUCTOR SENSITIVE ELEMENT Russian patent published in 1997 - IPC

Abstract RU 2096775 C1

FIELD: analytical instrumentation, branches of science and technology where analysis of gas and liquid media is required. SUBSTANCE: process manufacture of semiconductor sensitive element consists in sequential deposition of thin semiconductor layer and layer of metal-catalyst on dielectric thermally resistant substrate, of dielectric layer made from material permeable to measured component only on surfaces of metal-catalyst. EFFECT: facilitated manufacture of semiconductor sensitive elements. 12 dwg

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RU 2 096 775 C1

Authors

Rjabtsev Stanislav Viktorovich

Shaposhnik Aleksej Vladimirovich

Dates

1997-11-20Published

1995-05-04Filed