METHOD FOR GROWING SILICON MONOCRYSTAL FROM MOLTEN METAL Russian patent published in 2013 - IPC C30B15/00 C30B29/60 

FIELD: metallurgy.

SUBSTANCE: method involves supply of working gas to the chamber with further evacuation of formed gas flow with steam-gas mixture formed above molten metal, which is located in a melting pot; at that, working gas is supplied to the chamber from below, for the meting pot, and steam-gas mixture is evacuated above the melting pot; at that, after gas flow is supplied to the chamber, it is directed along walls of the melting pot through heat-insulating material so that it is heated due to contact with heat insulation and its volume increases, which reduces its flow rate, extracts some part of heat from heat insulation, thus reducing the flow of cooling water and electric power, and when passing above the molten metal surface, it carries over steam-gas mixture in upward direction.

EFFECT: avoiding the action of corrosive steam-gas mixture on elements of heating system, thus considerably increasing its service life.

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