FIELD: organic chemistry. SUBSTANCE: claimed process for epitaxial growth of gallium nitride from gas phase comprises passing ammonia stream above metallic gallium source and precipitating layers onto supports. In order to increase thickness of layers, the gallium source is positioned opposite the supports at distance of 2-5 mm, the ammonium stream is passed between said supports at rate of 25-50 l/h and precipitation is carried out at 1170-1270 C and the source temperature is by 10-50 C higher than said temperature. EFFECT: more efficient epitaxial growth process.
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