METHOD OF GROWING EPITAXIAL LAYERS OF SEMICONDUCTOR CRYSTALS OF GROUP THREE NITRIDES ON LAYERED CRYSTALLINE STRUCTURE Russian patent published in 2015 - IPC C30B25/22 C30B29/38 C30B25/18 H01L21/20 H01L21/268 

FIELD: chemistry.

SUBSTANCE: method is based on application of laser radiation with wavelength and power, selected in such a way that laser radiation is absorbed near one of the borders of layered crystalline structure and partially destroys group III nitride near said border, and thus weakens mechanical strength of said border and entire layered crystalline structure. Obtained by said method crystalline structures with optically weakened border can be used as substrates for growing epitaxial crystalline layers of group three nitrides and make it possible to considerably weaken mechanical stresses that arise due to mismatch of parameters of crystalline lattices and thermal expansion coefficients.

EFFECT: weakening of mechanical stresses results in reduction of curvature of epitaxial layers and reduces quantity of growth defects in epitaxial layers, application of mechanical or thermomechanical stress to epitaxial layers, grown on crystalline structures with optically weakened border makes it possible to easily separate obtained epitaxial layers from initial substrate on optically weakened border.

8 cl, 20 dwg, 7 ex