ELECTRONIC DEVICE BASED ON A SINGLE-ELECTRON TRANSISTOR THAT IMPLEMENTS A NEGATIVE DIFFERENTIAL RESISTANCE Russian patent published in 2021 - IPC H01L21/336 H01L29/78 B82Y10/00 

FIELD: nanotechnologies.

SUBSTANCE: invention relates to nanotechnologies, and specifically to technologies for manufacturing single-electron transistors that can be used to design new computing, communication and sensor devices. An electronic device based on a single-electron transistor includes a substrate with drain and source electrodes located on it, controlling the gate electrodes, while the drain and source electrodes are made of a conductive material, arranged in the same plane to form a gap and connected by a bridge containing 2 to 10 impurity atoms in its quasi-two-dimensional layer, while the impurity atoms are located at a distance from each other, providing electron tunneling and creating a negative differential resistance when voltage is applied to the drain and source electrodes.

EFFECT: invention provides the possibility of creating an electronic device based on a single-electron transistor that implements a negative differential resistance and has a working area of up to 50 nm.

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