CANTILEVER WITH SINGLE-ELECTRODE TRANSISTOR FOR PROBING MICROSCOPY Russian patent published in 2014 - IPC G01Q60/30 G01Q60/38 B82Y35/00 

FIELD: instrumentation.

SUBSTANCE: probe for scanning probe microscope comprises charge sensor arranged at cantilever tip and composed of single-electrode transistor made in silicon layer doped to degenerate state of silicon-on-insulator (SOI) structure on substrate. Transistor has two feed electrodes arranged at acute angle to each other in substrate plate with converging ends staying in contact with transistor feed island to make transistor source and drain, two sharpened mid electrode arranged in the area of convergence of feed electrodes, its tip being directed towards conducting island to make capacitance clearance with the latter acting as transistor gate. Jumpers in zone of contact of feed electrode ends with transistor feed island represent resistor elements to make tunnel transition. Note here that substrate edge is skewed while transistor island, jumpers and feed and mid electrode ends adjoining said skew extend beyond the insulator layer.

EFFECT: ruled out parasitic noise effects of moving charges concentrated in SOI plate insulator layer, higher charge sensitivity of probe.

5 cl, 6 dwg