THYRISTOR MANUFACTURING PROCESS Russian patent published in 1998 - IPC

Abstract RU 2106038 C1

FIELD: power semiconductor engineering. SUBSTANCE: process includes cutting of silicon ingot into plates and formation of diffusion structure with p-n junctions. Cathode emitter junction for thyristor with broad n-type base region or anode emitter junction for thyristors with broad p-type base region is formed on side opposite to that cut off. EFFECT: facilitated procedure. 1 tbl

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RU 2 106 038 C1

Authors

Gejfman E.M.

Chibirkin V.V.

Mikhajlov V.P.

Ivanov V.P.

German A.E.

Chelmakin V.I.

Dates

1998-02-27—Published

1996-07-23—Filed