PROCESS OF MANUFACTURE OF BIPOLAR TRANSISTOR Russian patent published in 1997 - IPC

FIELD: electronics, manufacture of bipolar transistors with regions of base and emitter ' close to wall ' of regions of base and emitter. SUBSTANCE: process of manufacture of bipolar transistor includes formation of local latent layer in silicon substrate, deposition of epitaxial layer, doping of points of future arrangement of regions of emitter and base ' close to wall ' of dielectric with base dopant, formation of insulating layer of dielectric, formation of base limited by region of dielectric, formation of layer of polycrystalline silicon doped with emitter dopant, formation of polycrystalline electrode, formation of emitter manufactured by diffusion from polycrystalline electrode and limited by region of dielectric at least on one side. EFFECT: prevention of electric punch-through of base in region ' close to wall ' of dielectric beneath emitter due to narrowing of width of base. 8 dwg