METHOD FOR DECREASING THYRISTOR LOCKING TIME Russian patent published in 2000 - IPC

FIELD: electronic equipment, in particular, design and production of thyristors. SUBSTANCE: method involves uniform radiation of rectifying regions of thyristors by flow of fast electrons or protons and additional localized radiation in order to create region, which has increased recombination and is located under control electrode and adjacent cathode region edge with width of 200-500 mcm. Amount of additional localized radiation conforms to conditions Ф = (t₁/t₂-1)/(τ_pcer•K_τp) or Ф = (t₁/t₂-1)(t₁•K_tq), where K_τp is rate of degradation of life time of non- equilibrium charge carriers upon radiation; t1, t2 are thyristor locking times measured before localized radiation, so that both values are measured in same mode, but negative current pulse is applied to thyristor control circuit upon t2; τ_pcer is life time of non- equilibrium charge carriers in control electrode region before localized radiation, K_tq is rate of locking time degradation upon additional localized radiation. EFFECT: possibility of device operations at higher frequencies with decreased losses. 2 cl, 3 tbl