METHOD FOR ELECTROFORMING IN THE MANUFACTURE OF A MEMORY ELEMENT Russian patent published in 2022 - IPC H01L21/326 

FIELD: computer technology.

SUBSTANCE: invention relates to the technology of manufacturing elements of non-volatile electrically reprogrammable memory, the information in which is encoded by the value of resistance. A method for electroforming in the manufacture of a memory element, including placing a conductor -dielectric - conductor structure with a dielectric surface open to the gas phase, located between the conducting electrodes, in a vacuum and holding it under voltage in two stages: at the first one at a voltage that leads to the appearance of an intermittently changing current with an average level of the order of microamps, at the second stage in the voltage range from 4 to 6 V before the appearance of currents at the level set by the current limitation scheme. In this case, according to the invention, the structure is first annealed in an oil-free vacuum at a temperature of more than 60°C, then the exposure is carried out under voltage for a time of about a second, while the first stage of exposure is performed in an oil-free vacuum in the range from 9 V to a voltage that does not lead to an electrical breakdown, and the second stage of exposure is performed in a vacuum containing pairs of organic compounds. The second stage of exposure is performed, for example, in an oil vacuum.

EFFECT: invention provides an increase in the efficiency of electroforming by reducing the probability of breakdown of the structure with a sharp increase in current, i.e. the conductivity of the structure due to the removal of organic molecules during annealing.

1 cl, 6 dwg