CELL OF NONVOLATILE ELECTRICALLY PROGRAMMABLE MEMORY Russian patent published in 2011 - IPC H01L27/115 B82B1/00 

FIELD: electricity.

SUBSTANCE: cell of nonvolatile electrically programmable memory includes a conducting bus of the first level, a semiconductor structure connected to it (for instance, a diode or a transistor), providing for electric isolation of cells in a matrix, and comprising an area with high concentration of current carriers from a semiconductor n⁺- or p⁺-type, a conducting bus of the second level crossing with the bus of the first level, a layer of dielectric arranged directly under the bus of the second level with thickness from 3 to 100 nm, an insulating slot in the form of an open end of the dielectric layer, a material with alternating conductivity arranged in the insulating slot, and its conductivity changes as an electron flux passes through it, and a medium that contacts with the surface of the insulating slot and providing for exchange of material particles with alternating conductivity. Under the insulating slot between the layer of dielectric and area with high concentration of current carriers of the semiconductor structure there is an additional conducting element from titanium nitride, which is electrically insulated from all other elements of the memory cell.

EFFECT: reduced supply voltage, increased radiation resistance and improved manufacturability of memory cell manufacturing by methods of traditional silicon technology.

4 cl, 7 dwg, 1 tbl