FIELD: electricity.
SUBSTANCE: memory element includes conductive layers of the first and the second level, a dielectric layer of 3 to 100 nm thickness located between them and directly below the conductive layer of the second level, an insulating gap in the form of an open end of the dielectric layer, a material with variable conductivity that varies when an electron beam passes through it is located in the insulating gap, and a medium in contact with the surface of the insulating gap and ensures the exchange of particles of a material with variable conductivity, between the insulating gap and the conductive layer of the first level an additional dielectric layer with thickness from 1.3 to 3 nm is located.
EFFECT: decrease the probability of an electric breakdown of a memory element.
3 cl, 9 dwg
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