FIELD: instrumentation engineering. SUBSTANCE: given sensor includes electric insulation substrate carrying heater, temperature-sensitive element, electrodes of gas-sensitive layer and gas-sensitive layer placed into metal-and-ceramic case. Substrate is made from silicon and has layer of silicon dioxide deposited on it. Heater and temperature-sensitive element are fabricated from platinum with sublayer of titanium in the form of resistors of meander type. Electrodes of gas-sensitive layer are manufactured in the form of interdigital structure of same material. Gas-sensitive layer presents film of metal-oxide semiconductor. EFFECT: simplified design and enhanced reliability of gas sensor. 2 cl, 2 dwg
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