SEMICONDUCTOR METAL-OXIDE GAS SENSOR Russian patent published in 2003 - IPC

FIELD: gas-analyzing equipment, sensors monitoring toxic and explosive gases. SUBSTANCE: semiconductor metal-oxide gas sensor presents silicon crystal coated with insulating layer of silicon dioxide which carries heater-thermal element coming in the form of resistor made of platinum with titanium sublayer, electrodes of interdigital design produced from same material as gas-sensitive layer and gas-sensitive layer which is polycrystalline film of tin dioxide or other metal-oxide semiconductor. Crystal is placed into standard four-lead metal-and-glass package readily built into gas systems. EFFECT: simplified design and raised functional reliability of gas sensor. 2 dwg