MAGNETRON METHOD OF SPRAYING Russian patent published in 1998 - IPC

Abstract RU 2114487 C1

FIELD: thin-film technology for microelectronics and integrated optics. SUBSTANCE: method involves application of DC voltage to discharge gap of magnetron; novelty is that working gas used in the process contains electrically negative component, such as oxygen, and capacitor is connected in parallel with discharge gap to ensure resonance-tuned oscillations of plasma in discharge gap. Current and voltage in discharge circuit oscillate at frequency of 10 kHz thereby preventing fracture of target and ensuring reproducible conditions for spraying. EFFECT: simplified means required for implementing this method, such as half-wave rectifiers. 2 dwg

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RU 2 114 487 C1

Authors

Abduev A.Kh.

Magomedov A.M.

Dates

1998-06-27Published

1996-05-30Filed