FIELD: winning of pure metals and semiconductors. SUBSTANCE: process can be recommended for clearing of materials from charged impurities that were cleared in zones. Process is based on galvanomagnetic effect. According to it charged atoms move in permanent electric field in opposite directions depending on their signs and deviate in lateral short- circuited Hall electric field to one and same side in direction perpendicular to magnetic field and electric current. Subsequent uniform cooling of liquid phase to full crystallization with switched on current and magnetic field freezes charges impurities by one of butts of ingot. Multiple application of given process to one and same material when purer half of ingot is taken for repeat clearing gives possibility of full clearing of material from charged impurities. Process can be employed for selective clearing of material from charged impurities. EFFECT: winning of materials of high purity. 2 dwg
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Authors
Dates
1999-02-20—Published
1998-02-12—Filed