METHOD FOR PRODUCING QUASI-BICRYSTAL ZINC OXIDE STRUCTURES Russian patent published in 2003 - IPC

Abstract RU 2202138 C2

FIELD: electronic material science. SUBSTANCE: part of single-crystalline substrate is covered with thin basic grain oriented layer by magnetron spraying with use of mask, substrate temperature being not over 500 K. Epitaxial layers are grown on entire substrate surface by method of chemical transport reactions to form degenerate structural junction . EFFECT: provision for producing quasi-bicrystal zinc oxide structures. 2 dwg

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RU 2 202 138 C2

Authors

Ataev B.M.

Kamilov I.K.

Bagamadova A.M.

Mamedov V.V.

Omaev A.K.

Makhmudov S.Sh.

Dates

2003-04-10Published

2000-05-26Filed