FIELD: microscopy. SUBSTANCE: process involves formation of protective coat based on silicon nitride on upper and lower sides of silicon substrate. Local nitride mask is formed from it on upper side of substrate. Needle-shaped protrusions are formed by anisotropic etching of silicon from upper side of substrate. Then local nitride mask and first protective coat are removed from lower side of substrate. Layer of silicon dioxide is formed on both sides of substrate. Local oxide mask is formed out of it on upper side of substrate. On upper side of substrate there is formed p+ diffusion layer by doping with boron. Then local oxide mask and layer of silicon dioxide are removed. Second protective coat based on silicon nitride is formed on lower side of substrate. Local nitride mask is formed out of it. Anisotropic etching of silicon selective with regard to p+ diffusion layer is conducted . Local nitride mask is removed. EFFECT: provision for reproducibility of length of silicon beam and physical and mechanical parameters. 13 dwg
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Authors
Dates
1998-11-10—Published
1997-05-08—Filed