POTATO GROWING METHOD Russian patent published in 1998 - IPC

FIELD: agriculture, in particular, growing of potato in individual lands. SUBSTANCE: method involves germinating seed material in vessel made from nonwoven covering material, such as polypropylene, till sprouts reach 5-6 cm length; performing planting of separate sprouts and covering with nonwoven covering material; transplanting plants having height of 12-15 cm to permanent place for final growing; upon growing of stems before flower bud stage, separating young tops of sprouts of 5-6 cm length from plants and planting and covering them with covering material for rootage. EFFECT: increased efficiency by intensified multiplication of valuable sorts of potato, reduced labor intensity and provision for obtaining normalized seed material. 2 cl