SYSTEM FOR TREATMENT OF SEMICONDUCTOR ARTICLE (VERSIONS), BUILT-IN GETTER PUMP AND METHOD OF TREATMENT OF SEMICONDUCTOR ARTICLES Russian patent published in 1999 - IPC

Abstract RU 2125619 C1

FIELD: systems of ultrahigh vacuum for treatment of semiconductor articles, getter pumps used therein and methods of treatment of semiconductor articles. SUBSTANCE: system includes treatment chamber, low-pressure pump connected to this chamber for pumping of noble and nonnoble gases, valve mechanism connecting the source of noble gas with the chamber, built-in getter pump installed inside the chamber which pumps definite nonnoble gases during supply of noble gas to the chamber, and also mechanism for treatment of semiconductor article placed inside the treatment chamber. It is preferably to have getter pump act at a number of different temperatures for pumping of various samples of gas under these temperatures. Gas analyzer is used for automatic regulation of temperature of getter pump to regulate gas samples which are subject to pumping. The method for treatment of semiconductor article includes operations of placing the article inside the chamber of treatment and sealing of this chamber by external low-pressure pump and built-in getter pump found inside the chamber and which pumps nonnoble gases, and also operation of treatment of semiconductor article inside the chamber and concurrent supply of noble gas. The method includes also operations of tracing and regulation of gas composition inside the chamber and regulation of temperature of getter material on the basis of analysis of this composition. EFFECT: higher efficiency. 54 cl, 10 dwg

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RU 2 125 619 C1

Authors

Lorimer D'Arej G.

Krjuger Gordon P.

Dates

1999-01-27Published

1995-10-30Filed