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2 151 449

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IPC

(21) (22)

Application

99100920/28, 1999-01-15

(24)

Start date

1999-01-15

(22)

Actual filing date

1999-01-15

(45)

Published

2000-06-20

(72)

Inventor

Zaddeh V.V.Strebkov D.S.Poljakov V.I.Starshinov I.P.

(73)

Holder

Vserossijskij Nauchno-Issledovatel'Skij Institut Ehlektrifikatsii Sel'Skogo Khozjajstva

METHOD FOR PRODUCING PHOTOELECTRIC TRANSDUCERS WITH POROUS SILICON FILM Russian patent published in 2000 - IPC

Abstract RU 2151449 C1

FIELD: optoelectronic devices. SUBSTANCE: upon diffusion doping of silicon surface photosensitive areas of surface are covered, prior to depositing contacts, with porous silicon film that functions as shielding mask during deposition of contacts. Additional growth of transducer efficiency is provided due to the fact that when p-n junction is formed, phosphor-doped layer on porous silicon areas is made thinner than on contact areas. EFFECT: facilitated manufacture, improved efficiency of device. 2 cl

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RU 2 151 449 C1

Authors

Zaddeh V.V.

Strebkov D.S.

Poljakov V.I.

Starshinov I.P.

Dates

2000-06-20—Published

1999-01-15—Filed