SEMICONDUCTOR PHOTOELECTRIC CONVERTER AND METHOD OF MAKING SAID CONVERTER (VERSIONS) Russian patent published in 2012 - IPC H01L27/142 H01L31/18 

FIELD: physics.

SUBSTANCE: semiconductor photoconverter made in form of an array of microelements interconnected successively by contacts, said microelements having n⁺-p-p⁺ (p⁺-n-n⁺) diode structures, p-n junction planes and contacts of which are perpendicular to the working surface on which radiation falls; two or three linear dimensions of the microelements are comparable with the diffusion length of minority charge carriers in the base region. Each element on both working surfaces has an insulated region with an additional p-p⁺ (n-n⁺) isotype junction, the plane of which is parallel to the working surface, and areas of the base and doped region of diode structures, free from contact, have a passivating antireflective film. An electrically insulating heat-conducting film and a low heat capacity absorbing film are deposited on one side of the array. The invention also discloses several versions of the photoconverter described above and methods of making said photoconverters.

EFFECT: high photocurrent and reduced surface recombination losses, high efficiency of the semiconductor photoconverter.

29 cl, 4 dwg, 2 ex