METHOD OF SEMICONDUCTOR PHOTOTRANSFORMER MANUFACTURING Russian patent published in 2009 - IPC H01L31/18 

FIELD: physics, semiconductors.

SUBSTANCE: invention concerns the electronic technics, namely to manufacturing techniques of semiconductor phototransformers (SP) and can be used in manufacture of recommenced energy sources. A problem of the offered invention is making of an expedient of manufacturing a semiconductor phototransformer providing increase of efficiency of matrix phototransformers. The essence of the invention consists that after metallisation semiconductor structures agglomerate in a leaky pile, fill gaps in a pile with a brazing flux, immerse a pile in the fused solder and under axial pressure delete a redundant stratum of solder. The invention provides efficiency increase of phototransformers at the expense of use of the operations providing increase of homogeneity of a metal layer of linking of semiconductor plates in a pile.

EFFECT: efficiency increase of phototransformers at the expense of use of the operations providing increase of homogeneity of a metal layer of linking of semiconductor plates in a pile.